Transforming Nanoelectronics with Threshold Switching Volatile Memristors
Speaker: Ahmedullah Aziz – Knoxville, TN, United StatesTopic(s): Graphics and Computer-Aided Design , Hardware, Power and Energy , Architecture, Embedded Systems and Electronics, Robotics
Abstract
Relentless miniaturization of transistors, driven by Moore's Law, has long propelled electronics' evolution towards atomic scales. With each new technology generation, we draw nearer to these minuscule dimensions. Consequently, quantum phenomena and fundamental physical limits have emerged as pressing concerns in device and circuit design. Traditional CMOS-based electronics are in transition, ushering in the post-CMOS era and sparking a surge in the exploration of novel materials and devices. These emerging technologies bring unique characteristics that unlock new opportunities or present fresh challenges. Navigating this landscape is both a challenge and an exciting endeavor as we seek to harness the attributes of emerging materials. Volatile memristors, known for their electrically induced phase transitions, stand out as one of the most promising materials with the potential to revolutionize the next generation of electronics. This presentation will showcase several innovative device/circuit concepts that leverage selective resistance switching within these materials. The first segment of the discussion will delve into memristor-augmented spintronic memory devices. This approach capitalizes on the non-volatility of magnetic tunnel junctions, coupled with the abrupt switching and high selectivity of threshold-switching memristors, addressing critical challenges in spin-based memories. The talk will illustrate some extensions to this concept across memory platforms, arrays, and peripheral circuits, highlighting its transformative potential. The next part will shift the spotlight onto the oscillatory behavior of volatile Mott memristors and explore their applications in energy-efficient neuromorphic computing systems. These concepts will exhibit the need for synergy and careful co-design between devices and circuits to pave the way for next-generation electronics..About this Lecture
Number of Slides: 50Duration: 60 minutes
Languages Available: Bengali, English
Last Updated:
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